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Dynamics of metal etching and oxidat...

Martz, Joseph Christopher.

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Dynamics of metal etching and oxidation in fluorocarbon/oxygen RF glow discharges.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Dynamics of metal etching and oxidation in fluorocarbon/oxygen RF glow discharges./
作者:	Martz, Joseph Christopher.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 1991,
面頁冊數:	276 p.
附註:	Source: Dissertations Abstracts International, Volume: 53-07, Section: B.
Contained By:	Dissertations Abstracts International53-07B.
標題:	Chemical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9203639

Dynamics of metal etching and oxidation in fluorocarbon/oxygen RF glow discharges.
Martz, Joseph Christopher.

Dynamics of metal etching and oxidation in fluorocarbon/oxygen RF glow discharges. - Ann Arbor : ProQuest Dissertations & Theses, 1991 - 276 p.

Source: Dissertations Abstracts International, Volume: 53-07, Section: B.

Thesis (Ph.D.)--University of California, Berkeley, 1991.

This item must not be sold to any third party vendors.

A variety of in situ diagnostics have been used to determine the dynamic behavior of both the etching and oxidation reactions of tantalum and plutonium in RF glow discharges (plasmas). Numerous aspects of the concerted, heterogeneous reactions involved have been studied with quadrupole mass spectroscopy, emission spectroscopy (actinometry), and fluoroptic thermometry. In addition, direct in situ measurement of reaction rates has been performed with a quartz-crystal microbalance. The chemistry of the CF$\\sb4$/O$\\sb2$ discharge and its use in etching both tantalum and plutonium has been studied. Major products from the reaction of CF$\\sb4$ with O$\\sb2$ within the plasma include CO$\\sb2$, CO, COF$\\sb2$, F$\\sb2$, and F. Chemical mechanisms are suggested to account for the formation of these products. Measurement of Ta etch rates in CF$\\sb4$/O$\\sb2$ and C$\\sb2$F$\\sb6$/O$\\sb2$ plasmas as functions of reactor pressure, applied power, temperature, and system residence time reveal numerous chemical effects. The large heat of reaction in the Ta/F etching system, in conjunction with the moderate activation energy and thermally isolated nature of the plasma environment, leads to significant autothermic effects. Fluorocarbon polymer deposition at pressures above 400 mtorr leads to a quenching of the etch reaction in CF$\\sb4$/O$\\sb2$ plasmas. Similarly, the etch behavior of Ta in C$\\sb2$F$\\sb6$/O$\\sb2$ discharges at all pressures mirrors that of Ta in CF$\\sb4$/O$\\sb2$ plasmas at pressures above 400 mtorr. Plutonium etching has also been demonstrated in CF$\\sb4$/O$\\sb2$ plasmas. Plutonium oxides etch at rates 5 to 10 times faster than pure Pu metal. The reaction of Pu in the discharge proceeds at least 200 times faster than the reaction of Pu with purely thermal sources of F atoms such as O$\\sb2$F$\\sb2$. Such results suggest significant enhancement of the Pu/F reaction by the plasma environment. Lastly, oxidation of Ta in O$\\sb2$ discharges has been studied as a potential means of low-temperature Ta$\\sb2$O$\\sb5$ thin film fabrication. Plasma oxidation proceeds readily at room temperature. Two regimes are observed in the oxidation data: an initial, linear regime where oxide thickness is proportional to plasma exposure time, and a parabolic regime where oxide thickness increases with the square-root of exposure time.Subjects--Topical Terms:

560457
Chemical engineering.
Subjects--Index Terms:

plutonium

Dynamics of metal etching and oxidation in fluorocarbon/oxygen RF glow discharges.
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035 $a (MiAaPQ)AAI9203639
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100 1 $a Martz, Joseph Christopher. $3 3556860
245 1 0 $a Dynamics of metal etching and oxidation in fluorocarbon/oxygen RF glow discharges.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 1991
300 $a 276 p.
500 $a Source: Dissertations Abstracts International, Volume: 53-07, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Hess, Dennis W.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 1991.
506 $a This item must not be sold to any third party vendors.
506 $a This item must not be added to any third party search indexes.
520 $a A variety of in situ diagnostics have been used to determine the dynamic behavior of both the etching and oxidation reactions of tantalum and plutonium in RF glow discharges (plasmas). Numerous aspects of the concerted, heterogeneous reactions involved have been studied with quadrupole mass spectroscopy, emission spectroscopy (actinometry), and fluoroptic thermometry. In addition, direct in situ measurement of reaction rates has been performed with a quartz-crystal microbalance. The chemistry of the CF$\\sb4$/O$\\sb2$ discharge and its use in etching both tantalum and plutonium has been studied. Major products from the reaction of CF$\\sb4$ with O$\\sb2$ within the plasma include CO$\\sb2$, CO, COF$\\sb2$, F$\\sb2$, and F. Chemical mechanisms are suggested to account for the formation of these products. Measurement of Ta etch rates in CF$\\sb4$/O$\\sb2$ and C$\\sb2$F$\\sb6$/O$\\sb2$ plasmas as functions of reactor pressure, applied power, temperature, and system residence time reveal numerous chemical effects. The large heat of reaction in the Ta/F etching system, in conjunction with the moderate activation energy and thermally isolated nature of the plasma environment, leads to significant autothermic effects. Fluorocarbon polymer deposition at pressures above 400 mtorr leads to a quenching of the etch reaction in CF$\\sb4$/O$\\sb2$ plasmas. Similarly, the etch behavior of Ta in C$\\sb2$F$\\sb6$/O$\\sb2$ discharges at all pressures mirrors that of Ta in CF$\\sb4$/O$\\sb2$ plasmas at pressures above 400 mtorr. Plutonium etching has also been demonstrated in CF$\\sb4$/O$\\sb2$ plasmas. Plutonium oxides etch at rates 5 to 10 times faster than pure Pu metal. The reaction of Pu in the discharge proceeds at least 200 times faster than the reaction of Pu with purely thermal sources of F atoms such as O$\\sb2$F$\\sb2$. Such results suggest significant enhancement of the Pu/F reaction by the plasma environment. Lastly, oxidation of Ta in O$\\sb2$ discharges has been studied as a potential means of low-temperature Ta$\\sb2$O$\\sb5$ thin film fabrication. Plasma oxidation proceeds readily at room temperature. Two regimes are observed in the oxidation data: an initial, linear regime where oxide thickness is proportional to plasma exposure time, and a parabolic regime where oxide thickness increases with the square-root of exposure time.
590 $a School code: 0028.
650 4 $a Chemical engineering. $3 560457
650 4 $a Fluid dynamics. $3 545210
650 4 $a Gases. $3 559387
650 4 $a Materials science. $3 543314
653 $a plutonium
653 $a tantalum
690 $a 0542
690 $a 0759
690 $a 0759
690 $a 0794
710 2 $a University of California, Berkeley. $3 687832
773 0 $t Dissertations Abstracts International $g 53-07B.
790 $a 0028
791 $a Ph.D.
792 $a 1991
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9203639