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Nanoscale transistors : = device phy...

Guo, Jing, (1977-)

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Nanoscale transistors : = device physics, modeling and simulation /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Nanoscale transistors :/ Mark S. Lundstrom, Jing Guo.
其他題名:	device physics, modeling and simulation /
作者:	Lundstrom, Mark.
其他作者:	Guo, Jing,
出版者:	New York :Springer, : c2006.,
面頁冊數:	vi, 217 p. :ill. ;25 cm.
標題:	Metal oxide semiconductor field-effect transistors - Mathematical models. -
電子資源:	http://site.ebrary.com/lib/stanford/Doc?id=10133999Available to Stanford-affiliated users at:
電子資源:	http://www.myilibrary.com?id=61221Available to Stanford-affiliated users at:
電子資源:	http://www.springerlink.com/openurl.asp?genre=book&isbn=978-0-387-28002-8Available to Stanford-affiliated users at:
電子資源:	http://www.loc.gov/catdir/toc/fy0608/2005933746.html
電子資源:	http://www.loc.gov/catdir/enhancements/fy0663/2005933746-d.html
電子資源:	http://www.loc.gov/catdir/enhancements/fy0819/2005933746-b.html
電子資源:	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=014600648&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
電子資源:	http://deposit.ddb.de/cgi-bin/dokserv?id=2737947&prov=M&dok_var=1&dok_ext=htm
ISBN:	0387280022

Nanoscale transistors : = device physics, modeling and simulation /
Lundstrom, Mark.

Nanoscale transistors :device physics, modeling and simulation /Mark S. Lundstrom, Jing Guo. - New York :Springer,c2006. - vi, 217 p. :ill. ;25 cm.

Includes bibliographical references and index.

"Nanoscale transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanostransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors." "The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices."--BOOK JACKET.

ISBN: 0387280022

LCCN: 2005933746Subjects--Topical Terms:

914001
Metal oxide semiconductor field-effect transistors
--Mathematical models.

LC Class. No.: TK7871.95 / .N36 2006

Dewey Class. No.: 621.381528

Nanoscale transistors : = device physics, modeling and simulation /
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